Influence of intrinsic strain on the surface acoustic wave-induced birefringence in InGaAs-GaAs and InGaAsP-InP multiple-quantum-well optical modulators
Identifieur interne : 00C576 ( Main/Repository ); précédent : 00C575; suivant : 00C577Influence of intrinsic strain on the surface acoustic wave-induced birefringence in InGaAs-GaAs and InGaAsP-InP multiple-quantum-well optical modulators
Auteurs : RBID : Pascal:03-0123351Descripteurs français
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- 4279J, 4279H, 7867D, 8535B, 6865F, 7321F, 7820F, 7820H, 6835I, 7135, Etude expérimentale, Indium composé, Gallium arséniure, Modulation acoustooptique, Dispositif puits quantique, Puits quantique semiconducteur, Contrainte interne, Biréfringence, Onde acoustique surface, Exciton, Bande valence, Semiconducteur III-V.
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Abstract
The effect of intrinsic strain on the surface acoustic wave (SAW)-induced birefringence in InGaAs-GaAs and InGaAsP-InP multiple-quantum-well (MQW) optical modulators is investigated. We solve the exciton equation in momentum space using a two-dimensional quadrature method to obtain the birefringence Δn by the SAW induced strain. Our calculations are in good agreement with the experimental results in AlGaAs-GaAs and InGaAs-GaAs MQWs. Intrinsic strain influences the band mixing of valance subbands in quantum wells in the presence of asymmetric strain. We have shown that birefringence (Δn∼0.06) is significantly higher in tensile strained (∼0.7%) InGaAsP-InP MQWs than in compressively strained In0.21Ga0.79As-GaAs MQW devices. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Influence of intrinsic strain on the surface acoustic wave-induced birefringence in InGaAs-GaAs and InGaAsP-InP multiple-quantum-well optical modulators</title><author><name sortKey="Wang, X T" uniqKey="Wang X">X. T. Wang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Electrical and Computer Engineering Department, 260 Glenbrook Road, University of Connecticut, Storrs, Connecticut 06269-2157</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Electrical and Computer Engineering Department, 260 Glenbrook Road, University of Connecticut, Storrs</wicri:cityArea></affiliation></author><author><name sortKey="Jain, F C" uniqKey="Jain F">F. C. Jain</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Electrical and Computer Engineering Department, 260 Glenbrook Road, University of Connecticut, Storrs, Connecticut 06269-2157</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Electrical and Computer Engineering Department, 260 Glenbrook Road, University of Connecticut, Storrs</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0123351</idno><date when="2003-03-10">2003-03-10</date><idno type="stanalyst">PASCAL 03-0123351 AIP</idno><idno type="RBID">Pascal:03-0123351</idno><idno type="wicri:Area/Main/Corpus">00DB23</idno><idno type="wicri:Area/Main/Repository">00C576</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Acoustic surface waves</term><term>Acousto-optical modulation</term><term>Birefringence</term><term>Excitons</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Internal stresses</term><term>Quantum well devices</term><term>Semiconductor quantum wells</term><term>Valence bands</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4279J</term><term>4279H</term><term>7867D</term><term>8535B</term><term>6865F</term><term>7321F</term><term>7820F</term><term>7820H</term><term>6835I</term><term>7135</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Modulation acoustooptique</term><term>Dispositif puits quantique</term><term>Puits quantique semiconducteur</term><term>Contrainte interne</term><term>Biréfringence</term><term>Onde acoustique surface</term><term>Exciton</term><term>Bande valence</term><term>Semiconducteur III-V</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The effect of intrinsic strain on the surface acoustic wave (SAW)-induced birefringence in InGaAs-GaAs and InGaAsP-InP multiple-quantum-well (MQW) optical modulators is investigated. We solve the exciton equation in momentum space using a two-dimensional quadrature method to obtain the birefringence Δn by the SAW induced strain. Our calculations are in good agreement with the experimental results in AlGaAs-GaAs and InGaAs-GaAs MQWs. Intrinsic strain influences the band mixing of valance subbands in quantum wells in the presence of asymmetric strain. We have shown that birefringence (Δn∼0.06) is significantly higher in tensile strained (∼0.7%) InGaAsP-InP MQWs than in compressively strained In<sub>0.21</sub>Ga<sub>0.79</sub>As-GaAs MQW devices. © 2003 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>82</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Influence of intrinsic strain on the surface acoustic wave-induced birefringence in InGaAs-GaAs and InGaAsP-InP multiple-quantum-well optical modulators</s1></fA08><fA11 i1="01" i2="1"><s1>WANG (X. T.)</s1></fA11><fA11 i1="02" i2="1"><s1>JAIN (F. C.)</s1></fA11><fA14 i1="01"><s1>Electrical and Computer Engineering Department, 260 Glenbrook Road, University of Connecticut, Storrs, Connecticut 06269-2157</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>1535-1537</s1></fA20><fA21><s1>2003-03-10</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0123351</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The effect of intrinsic strain on the surface acoustic wave (SAW)-induced birefringence in InGaAs-GaAs and InGaAsP-InP multiple-quantum-well (MQW) optical modulators is investigated. We solve the exciton equation in momentum space using a two-dimensional quadrature method to obtain the birefringence Δn by the SAW induced strain. Our calculations are in good agreement with the experimental results in AlGaAs-GaAs and InGaAs-GaAs MQWs. Intrinsic strain influences the band mixing of valance subbands in quantum wells in the presence of asymmetric strain. We have shown that birefringence (Δn∼0.06) is significantly higher in tensile strained (∼0.7%) InGaAsP-InP MQWs than in compressively strained In<sub>0.21</sub>Ga<sub>0.79</sub>As-GaAs MQW devices. © 2003 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B40B79J</s0></fC02><fC02 i1="02" i2="3"><s0>001B40B79H</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H67D</s0></fC02><fC02 i1="04" i2="X"><s0>001D03F18</s0></fC02><fC02 i1="05" i2="3"><s0>001B60H65</s0></fC02><fC02 i1="06" i2="3"><s0>001B70C21F</s0></fC02><fC02 i1="07" i2="3"><s0>001B70H20F</s0></fC02><fC02 i1="08" i2="3"><s0>001B70H20H</s0></fC02><fC02 i1="09" i2="3"><s0>001B60H35G</s0></fC02><fC02 i1="10" i2="3"><s0>001B70A35</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>4279J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>4279H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7867D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>8535B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>6865F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>7321F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>7820F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="08" i2="3" l="FRE"><s0>7820H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="09" i2="3" l="FRE"><s0>6835I</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="10" i2="3" l="FRE"><s0>7135</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Modulation acoustooptique</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Acousto-optical modulation</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Dispositif puits quantique</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Quantum well devices</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Contrainte interne</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Internal stresses</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Biréfringence</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Birefringence</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Onde acoustique surface</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Acoustic surface waves</s0></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Exciton</s0></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Excitons</s0></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Bande valence</s0></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Valence bands</s0></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="22" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fN21><s1>069</s1></fN21><fN47 i1="01" i2="1"><s0>0309M000029</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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